Dario Alfè

Department of Earth Sciences, University College London, London, United Kingdom

Computational modeling of SiC formation by C60 epitaxy on Si(1,1,1)-7×7 surface

Computational modeling of SiC formation by C60 epitaxy on Si(1,1,1)-7×7 surface

Conference Title: 16th International Workshop on Computational Physics and Materials Science: Total Energy and Force Methods

Date and Places: 10-12 January 2013, ICTP in Trieste, Italy

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