Computational modeling of SiC formation by C60 epitaxy on Si(1,1,1)-7×7 surface

Computational modeling of SiC formation by C60 epitaxy on Si(1,1,1)-7×7 surface
Series: Posters
Genre: Materials Science
Publisher: Technicum Scientific Publishing
Publication Year: 2015
Conference Title: 16th International Workshop on Computational Physics and Materials Science: Total Energy and Force Methods
Date and Places: 10-12 January 2013, ICTP in Trieste, Italy
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Overview

Author(s):
dr. Simone Taioli (1), dr. Giovanni Garberoglio (1), dr. Silvio A Beccara (1), dr. Maurizio Dapor (2), dr. Stefano Simonucci (3), dr. Roberto Verucchi (3), dr. Lucrezia Aversa (3), dr. Marco Nardi (3), dr. Salvatore Iannotta (3), prof. dr. Dario Alfè (4)

Affiliations:
1. Laboratorio Interdisciplinare di Scienza Computazionale (LISC), Fondazione Bruno Kessler and University of Trento, Italy
2. Dipartimento di Fisica, University of Camerino, Camerino, Italy
3. Institute of Materials for Electronics and Magnetism, IMEM-CNR, Trento, Italy
4. Department of Earth Sciences, University College London, London, United Kingdom

 Keywords: Supersonic Molecular Beam Epitaxy, Silicon Carbide, Fullerene, Non-adiabatic Molecular dynamics, Electron spectroscopy of solids